Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator
نویسندگان
چکیده
We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the 〈1 3 0〉 directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 ◦C. (Some figures in this article are in colour only in the electronic version)
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